IXTK170N10P
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IXYS IXTK170N10P

Manufacturer No:
IXTK170N10P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK170N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170A TO264
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:198 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):715W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXTK170N10P IXTK170P10P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 500mA, 10V 12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 12600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 715W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 (IXTK) TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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