IXTK140N30P
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IXYS IXTK140N30P

Manufacturer No:
IXTK140N30P
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXTK140N30P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 140A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXTK140N30P IXTK140N20P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 70A, 10V 18mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 25 V 7500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 800W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 (IXTK) TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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