IXTK120P20T
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IXYS IXTK120P20T

Manufacturer No:
IXTK120P20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK120P20T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 120A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:740 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:73000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXTK120P20T IXTN120P20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V 740 nC @ 10 V
Vgs (Max) - ±15V
Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 25 V 73000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 830W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

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