IXTK110N20L2
  • Share:

IXYS IXTK110N20L2

Manufacturer No:
IXTK110N20L2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK110N20L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 110A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:500 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):960W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

$37.16
25

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTK110N20L2 IXTN110N20L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500 nC @ 10 V 500 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 960W (Tc) 735W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

Related Product By Categories

PJMD360N60EC_L2_00001
PJMD360N60EC_L2_00001
Panjit International Inc.
600V SUPER JUNCITON MOSFET
IRL510PBF
IRL510PBF
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
TK16A60W,S4VX
TK16A60W,S4VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO220SIS
TPH8R008NH,L1Q
TPH8R008NH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 34A 8SOP
AOTF25S65
AOTF25S65
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 25A TO220-3F
STD100N03LT4
STD100N03LT4
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
IRFSL4228PBF
IRFSL4228PBF
Infineon Technologies
MOSFET N-CH 150V 83A TO262
IPD12CN10NGBUMA1
IPD12CN10NGBUMA1
Infineon Technologies
MOSFET N-CH 100V 67A TO252-3
IXTK120N25
IXTK120N25
IXYS
MOSFET N-CH 250V 120A TO264
IPI120P04P4L03AKSA1
IPI120P04P4L03AKSA1
Infineon Technologies
MOSFET P-CH 40V 120A TO262-3
AO4264_DELTA
AO4264_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET N-CHANNEL 60V 12A 8SO
RRH090P03GZETB
RRH090P03GZETB
Rohm Semiconductor
MOSFET P-CH 30V 9A 8SOP

Related Product By Brand

DSP8-08AS-TRL
DSP8-08AS-TRL
IXYS
DIODE ARRAY GP 800V 11A TO263
CMA20E1600PZ-TUB
CMA20E1600PZ-TUB
IXYS
SCR 1.6KV 31A TO263
IXTA32P05T
IXTA32P05T
IXYS
MOSFET P-CH 50V 32A TO263
IXTA120P065T
IXTA120P065T
IXYS
MOSFET P-CH 65V 120A TO263
IXTK120N25P
IXTK120N25P
IXYS
MOSFET N-CH 250V 120A TO264
IXTA3N110
IXTA3N110
IXYS
MOSFET N-CH 1100V 3A TO263
IXTP12N50PM
IXTP12N50PM
IXYS
MOSFET N-CH 500V 6A TO220AB
IXFH52N30Q
IXFH52N30Q
IXYS
MOSFET N-CH 300V 52A TO247AD
IXTH74N15T
IXTH74N15T
IXYS
MOSFET N-CH 150V 74A TO247
IXYH24N170C
IXYH24N170C
IXYS
IGBT 1.7KV 58A TO247-3
IXSH45N120B
IXSH45N120B
IXYS
IGBT 1200V 75A 300W TO247
IXGP15N100C
IXGP15N100C
IXYS
IGBT 1000V 30A 150W TO220AB