IXTK102N65X2
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IXYS IXTK102N65X2

Manufacturer No:
IXTK102N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK102N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 102A TO264
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 51A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXTK102N65X2 IXTN102N65X2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 51A, 10V 30mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V 10900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1040W (Tc) 595AW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

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