IXTJ4N150
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IXYS IXTJ4N150

Manufacturer No:
IXTJ4N150
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTJ4N150 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1500V 2.5A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1576 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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Similar Products

Part Number IXTJ4N150 IXTJ6N150   IXTH4N150  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 2A, 10V 3.85Ohm @ 3A, 10V 6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V 67 nC @ 10 V 44.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1576 pF @ 25 V 2230 pF @ 25 V 1576 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 280W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 TO-247 TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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