IXTH6N90
  • Share:

IXYS IXTH6N90

Manufacturer No:
IXTH6N90
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH6N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 6A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
548

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH6N90 IXTH6N90A  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 500mA, 10V 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V 2600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IRF135B203
IRF135B203
Infineon Technologies
MOSFET N-CH 135V 129A TO220-3
SI4425DY
SI4425DY
Fairchild Semiconductor
P-CHANNEL MOSFET
FDP6035L
FDP6035L
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DMP3130L-7
DMP3130L-7
Diodes Incorporated
MOSFET P-CH 30V 3.5A SOT23-3
IPP12CN10LGXKSA1
IPP12CN10LGXKSA1
Infineon Technologies
MOSFET N-CH 100V 69A TO220-3
SI4162DY-T1-GE3
SI4162DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 19.3A 8SO
FCD850N80Z
FCD850N80Z
onsemi
MOSFET N-CH 800V 6A DPAK
RM15P30S8
RM15P30S8
Rectron USA
MOSFET P-CHANNEL 30V 15A 8SOP
SI7758DP-T1-GE3
SI7758DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
IXFK180N07
IXFK180N07
IXYS
MOSFET N-CH 70V 180A TO-264AA
SPI07N60C3XKSA1
SPI07N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 7.3A TO262-3
NTBV5605T4G
NTBV5605T4G
onsemi
MOSFET P-CH 60V 18.5A D2PAK

Related Product By Brand

DSP8-08S-TRL
DSP8-08S-TRL
IXYS
DIODE ARRAY GP 800V 11A TO263
DSS20-0015B
DSS20-0015B
IXYS
DIODE SCHOTTKY 15V 20A TO220AC
DSEI12-06A
DSEI12-06A
IXYS
DIODE GEN PURP 600V 14A TO220AC
MCMA110PD1200TB
MCMA110PD1200TB
IXYS
SCR MODULE 1.2KV 110A TO240AA
SV6050NA2RP
SV6050NA2RP
IXYS
AEC-Q GRADE 50 AMP STANDARD HIGH
IXTA3N150HV
IXTA3N150HV
IXYS
MOSFET N-CH 1500V 3A TO263
IXFH86N30T
IXFH86N30T
IXYS
MOSFET N-CH 300V 86A TO247AD
IXKC23N60C5
IXKC23N60C5
IXYS
MOSFET N-CH 600V 23A ISOPLUS220
IXGH48N60B3D1
IXGH48N60B3D1
IXYS
IGBT 600V 300W TO247
IXYP30N65C3
IXYP30N65C3
IXYS
DISC IGBT XPT-GENX3 TO-220AB/FP
IXXR100N60B3H1
IXXR100N60B3H1
IXYS
IGBT 600V 145A 400W ISOPLUS247
IXS839S1T/R
IXS839S1T/R
IXYS
IC GATE DRVR HALF-BRIDGE 8SOIC