IXTH6N120
  • Share:

IXYS IXTH6N120

Manufacturer No:
IXTH6N120
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXTH6N120 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 6A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.81
76

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH6N120 IXTH6N150   IXTH3N120  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1500 V 1200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 3A, 10V 3.5Ohm @ 500mA, 10V 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 67 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V 2230 pF @ 25 V 1300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 540W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

PSMN070-200P,127
PSMN070-200P,127
NXP Semiconductors
NEXPERIA PSMN070-200P - 35A, 200
PMV65XPEAR
PMV65XPEAR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
IPD25DP06NMATMA1
IPD25DP06NMATMA1
Infineon Technologies
MOSFET P-CH 60V 6.5A TO252-3
TK20N60W,S1VF
TK20N60W,S1VF
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO247
IRLU110ATU
IRLU110ATU
onsemi
MOSFET N-CH 100V 4.7A I-PAK
FQD19N10TF
FQD19N10TF
onsemi
MOSFET N-CH 100V 15.6A DPAK
NTB18N06G
NTB18N06G
onsemi
MOSFET N-CH 60V 15A D2PAK
FCPF20N60TYDTU
FCPF20N60TYDTU
onsemi
MOSFET N-CH 600V 20A TO220F-3
NTMFS4847NT1G
NTMFS4847NT1G
onsemi
MOSFET N-CH 30V 11.5A/85A 5DFN
2N7638-GA
2N7638-GA
GeneSiC Semiconductor
TRANS SJT 650V 8A TO276
IPP057N08N3GHKSA1
IPP057N08N3GHKSA1
Infineon Technologies
MOSFET N-CH 80V 80A TO220-3
SCTWA35N65G2VAG
SCTWA35N65G2VAG
STMicroelectronics
SICFET N-CH 650V 45A TO247

Related Product By Brand

DPG80C400HB
DPG80C400HB
IXYS
DIODE ARRAY GP 400V 40A TO247AD
DGSK20-025AS
DGSK20-025AS
IXYS
DIODE ARRAY SCHOTTKY 250V TO263
W6672TJ320
W6672TJ320
IXYS
DIODE GEN PURP 1.75KV 6672A -
CS35-12IO4
CS35-12IO4
IXYS
SCR 1.2KV 120A TO208AC
IXFA230N075T2-7
IXFA230N075T2-7
IXYS
MOSFET N-CH 75V 230A TO263-7
IXFK220N15P
IXFK220N15P
IXYS
MOSFET N-CH 150V 220A TO264AA
IXFA12N65X2-TRL
IXFA12N65X2-TRL
IXYS
MOSFET N-CH 650V 12A TO263
IXTA380N036T4-7
IXTA380N036T4-7
IXYS
MOSFET N-CH 36V 380A TO263-7
IXTH26N60P
IXTH26N60P
IXYS
MOSFET N-CH 600V 26A TO247
IXTA130N065T2
IXTA130N065T2
IXYS
MOSFET N-CH 65V 130A TO263
IXTQ30N50L
IXTQ30N50L
IXYS
MOSFET N-CH 500V 30A TO3P
IXFC24N50Q
IXFC24N50Q
IXYS
MOSFET N-CH 500V 21A ISOPLUS220