IXTH60N10
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IXYS IXTH60N10

Manufacturer No:
IXTH60N10
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH60N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A TO247
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH60N10 IXTH67N10   IXTH60N15  
Manufacturer IXYS IXYS IXYS
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 67A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 30A, 10V 25mOhm @ 33.5A, 10V 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 4mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 260 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V 4500 pF @ 25 V 3000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 275W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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