IXTH60N10
  • Share:

IXYS IXTH60N10

Manufacturer No:
IXTH60N10
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH60N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
177

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH60N10 IXTH67N10   IXTH60N15  
Manufacturer IXYS IXYS IXYS
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 67A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 30A, 10V 25mOhm @ 33.5A, 10V 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 4mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 260 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V 4500 pF @ 25 V 3000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 275W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

PJC7403_R1_00001
PJC7403_R1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
APT47N60SC3G
APT47N60SC3G
Microchip Technology
MOSFET N-CH 600V 47A D3PAK
XPH3R114MC,L1XHQ
XPH3R114MC,L1XHQ
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 100A 8SOP
PJQ2407_R1_00001
PJQ2407_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
SIHF22N60E-E3
SIHF22N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 21A TO220
IPB031NE7N3GATMA1
IPB031NE7N3GATMA1
Infineon Technologies
MOSFET N-CH 75V 100A TO263-3
BUK9275-100A,118
BUK9275-100A,118
NXP Semiconductors
NOW NEXPERIA BUK9275-100A - 21.7
IRF840LC
IRF840LC
Vishay Siliconix
MOSFET N-CH 500V 8A TO220AB
SPD15N06S2L-64
SPD15N06S2L-64
Infineon Technologies
MOSFET N-CH 55V 19A TO252-3
IRF7476TRPBF
IRF7476TRPBF
Infineon Technologies
MOSFET N-CH 12V 15A 8SO
MCH3474-TL-H
MCH3474-TL-H
onsemi
MOSFET N-CH 30V 4A SC70FL/MCPH3
NVD6820NLT4G
NVD6820NLT4G
onsemi
MOSFET N-CH 90V 10A/50A DPAK

Related Product By Brand

DPG15I200PA
DPG15I200PA
IXYS
DIODE GEN PURP 200V 15A TO220AC
DSS20-01AC
DSS20-01AC
IXYS
DIODE SCHOTTKY 100V 20A ISOPLUS
IXTA14N60P
IXTA14N60P
IXYS
MOSFET N-CH 600V 14A TO263
IXTP12N50P
IXTP12N50P
IXYS
MOSFET N-CH 500V 12A TO220AB
IXTA260N055T2
IXTA260N055T2
IXYS
MOSFET N-CH 55V 260A TO263
IXTN5N250
IXTN5N250
IXYS
MOSFET N-CH 2500V 5A SOT227B
IXFH14N100Q2
IXFH14N100Q2
IXYS
MOSFET N-CH 1000V 14A TO247AD
IXFH32N50Q
IXFH32N50Q
IXYS
MOSFET N-CH 500V 32A TO247AD
IXBA16N170AHV
IXBA16N170AHV
IXYS
REVERSE CONDUCTING IGBT
IXGH30N60C2D1
IXGH30N60C2D1
IXYS
IGBT 600V 70A 190W TO247
IXGR39N60B
IXGR39N60B
IXYS
IGBT 600V 66A 140W ISOPLUS247
IXDD404SI
IXDD404SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC