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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
IXTH5N100A
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IXYS IXTH5N100A
Manufacturer No:
IXTH5N100A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH5N100A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 5A TO247
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
180W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 (IXTH)
Package / Case:
TO-247-3
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UnitPrice:
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Quantity:
373
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