IXTH52N65X
  • Share:

IXYS IXTH52N65X

Manufacturer No:
IXTH52N65X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH52N65X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 52A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:68mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:113 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):660W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$10.84
60

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH52N65X IXTH32N65X  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 68mOhm @ 26A, 10V 135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4350 pF @ 25 V 2205 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 660W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FDS6064N3
FDS6064N3
Fairchild Semiconductor
MOSFET N-CH 20V 23A 8SO
PSMN2R8-25MLC,115
PSMN2R8-25MLC,115
Nexperia USA Inc.
MOSFET N-CH 25V 70A LFPAK33
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 6.3A 6TSOP
PMZ390UNEYL
PMZ390UNEYL
Nexperia USA Inc.
MOSFET N-CH 30V 900MA DFN1006-3
STF5N80K5
STF5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A TO220FP
PJD60R390E_L2_00001
PJD60R390E_L2_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
FDP20N50F
FDP20N50F
onsemi
MOSFET N-CH 500V 20A TO220-3
IRFR4105TR
IRFR4105TR
Infineon Technologies
MOSFET N-CH 55V 27A DPAK
IRFR3711TR
IRFR3711TR
Infineon Technologies
MOSFET N-CH 20V 100A DPAK
IRFZ46NSPBF
IRFZ46NSPBF
Infineon Technologies
MOSFET N-CH 55V 53A D2PAK
MCU10N10-TP
MCU10N10-TP
Micro Commercial Co
MOSFET N-CH 100V 9.6A DPAK
RE1E002SPTCL
RE1E002SPTCL
Rohm Semiconductor
MOSFET P-CH 30V 250MA EMT3F

Related Product By Brand

DMA10P1800PZ-TRL
DMA10P1800PZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
MCMA65P1200TA
MCMA65P1200TA
IXYS
SCR MODULE 1.2KV 65A TO240AA
CS19-08HO1
CS19-08HO1
IXYS
SCR 800V 29A TO220AB
CS19-08HO1S-TRL
CS19-08HO1S-TRL
IXYS
SCR 800V 29A TO263
IXTP60N20T
IXTP60N20T
IXYS
MOSFET N-CH 200V 60A TO220AB
IXFA180N10T2
IXFA180N10T2
IXYS
MOSFET N-CH 100V 180A TO263
IXFQ94N30P3
IXFQ94N30P3
IXYS
MOSFET N-CH 300V 94A TO3P
IXFR40N90P
IXFR40N90P
IXYS
MOSFET N-CH 900V 21A ISOPLUS247
IXFH16N90Q
IXFH16N90Q
IXYS
MOSFET N-CH 900V 16A TO247AD
IXFX44N55Q
IXFX44N55Q
IXYS
MOSFET N-CH 550V 44A PLUS247-3
IXYJ20N120C3D1
IXYJ20N120C3D1
IXYS
IGBT 1200V 21A 105W TO247
IXDF402SIA
IXDF402SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC