IXTH50N30
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IXYS IXTH50N30

Manufacturer No:
IXTH50N30
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH50N30 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 50A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH50N30 IXTH40N30   IXTH50N20  
Manufacturer IXYS IXYS IXYS
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 40A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 25A, 10V 85mOhm @ 500mA, 10V 45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V 220 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V 4600 pF @ 25 V 4600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 400W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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