IXTH48N20T
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IXYS IXTH48N20T

Manufacturer No:
IXTH48N20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH48N20T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 48A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):275W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH48N20T IXTH98N20T   IXTH48N20  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 98A (Tc) 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 10V
Rds On (Max) @ Id, Vgs - - 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 110 nC @ 10 V
Vgs (Max) - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - 3000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 275W (Tc) - 275W (Tc)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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