IXTH3N200P3HV
  • Share:

IXYS IXTH3N200P3HV

Manufacturer No:
IXTH3N200P3HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH3N200P3HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 2000V 3A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2000 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$31.52
3

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH3N200P3HV IXTH1N200P3HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V 2000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 1.5A, 10V 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 23.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 25 V 646 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247HV
Package / Case TO-247-3 TO-247-3 Variant

Related Product By Categories

IRFP9140NPBF
IRFP9140NPBF
Infineon Technologies
MOSFET P-CH 100V 23A TO247AC
FQD7N10TM
FQD7N10TM
Fairchild Semiconductor
MOSFET N-CH 100V 5.8A DPAK
FDD6676
FDD6676
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SSM3J15FV,L3F
SSM3J15FV,L3F
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 100MA VESM
IRF1404STRLPBF
IRF1404STRLPBF
Infineon Technologies
MOSFET N-CH 40V 162A D2PAK
IXFP30N25X3
IXFP30N25X3
IXYS
MOSFET N-CHANNEL 250V 30A TO220
FCPF150N65F
FCPF150N65F
onsemi
MOSFET N-CH 650V 14.9A TO220F
SIHU3N50D-GE3
SIHU3N50D-GE3
Vishay Siliconix
MOSFET N-CH 500V 3A TO251
NDT451N
NDT451N
onsemi
MOSFET N-CH 30V 5.5A SOT-223-4
NTD3055-150
NTD3055-150
onsemi
MOSFET N-CHAN 9A 60V DPAK
NTR4503NST1G
NTR4503NST1G
onsemi
MOSFET N-CH 30V 2.5A SOT23
AON6970_002
AON6970_002
Alpha & Omega Semiconductor Inc.
MOSFET N-CH DFN

Related Product By Brand

MCC132-16IO1
MCC132-16IO1
IXYS
THYRISTOR MOD 1600V 2X138A
MCD255-12IO1
MCD255-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y1-CU
MCC225-18IO1
MCC225-18IO1
IXYS
MOD THYRISTOR DUAL 1800V Y1-CU
IXTT1N250HV
IXTT1N250HV
IXYS
MOSFET N-CH 2500V 1.5A TO268
IXFA20N85XHV
IXFA20N85XHV
IXYS
MOSFET N-CH 850V 20A TO263
IXFH96N15P
IXFH96N15P
IXYS
MOSFET N-CH 150V 96A TO247AD
IXFN120N20
IXFN120N20
IXYS
MOSFET N-CH 200V 120A SOT-227B
IXFH7N90Q
IXFH7N90Q
IXYS
MOSFET N-CH 900V 7A TO247AD
IXFT23N60Q
IXFT23N60Q
IXYS
MOSFET N-CH 600V 23A TO268
IXGT32N170-TRL
IXGT32N170-TRL
IXYS
IGBT 1700V 75A 350W TO268
IXYP30N120C3
IXYP30N120C3
IXYS
IGBT 1200V 75A 500W TO220
IXGT31N60D1
IXGT31N60D1
IXYS
IGBT 600V 60A 150W TO268