IXTH3N120
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IXYS IXTH3N120

Manufacturer No:
IXTH3N120
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXTH3N120 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 3A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH3N120 IXTH6N120   IXTH3N150  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V 2.6Ohm @ 3A, 10V 7.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 56 nC @ 10 V 38.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1950 pF @ 25 V 1375 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 300W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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