IXTH30N60P
  • Share:

IXYS IXTH30N60P

Manufacturer No:
IXTH30N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH30N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$10.38
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH30N60P IXTH30N50P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 15A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 25 V 4150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 540W (Tc) 460W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IRFSL9N60APBF
IRFSL9N60APBF
Vishay Siliconix
MOSFET N-CH 600V 9.2A I2PAK
FQP3N25
FQP3N25
Fairchild Semiconductor
MOSFET N-CH 250V 2.8A TO220-3
IXFP26N50P3
IXFP26N50P3
IXYS
MOSFET N-CH 500V 26A TO220AB
SQ3456BEV-T1_GE3
SQ3456BEV-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 7.8A 6TSOP
FDP085N10A-F102
FDP085N10A-F102
onsemi
MOSFET N-CH 100V 96A TO220-3
AUIRFS4010TRL
AUIRFS4010TRL
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
UJ4SC075009B7S
UJ4SC075009B7S
UnitedSiC
750V/9MOHM, N-OFF SIC STACK CASC
IPI60R520CPAKSA1
IPI60R520CPAKSA1
Infineon Technologies
MOSFET N-CH 600V 6.8A TO262-3
STDLED623
STDLED623
STMicroelectronics
MOSFET N-CH 620V 3A DPAK
AO4435L_101
AO4435L_101
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 10.5A 8SOIC
RU1E002SPTCL
RU1E002SPTCL
Rohm Semiconductor
MOSFET P-CH 30V 250MA UMT3F
RT1E050RPTR
RT1E050RPTR
Rohm Semiconductor
MOSFET P-CH 30V 5A 8TSST

Related Product By Brand

DNA30E2200PC
DNA30E2200PC
IXYS
DIODE GEN PURP 2.2KV 30A TO263
MCC19-14IO8B
MCC19-14IO8B
IXYS
MOD THYRISTOR DUAL 1400V TO240AA
IXTX240N075L2
IXTX240N075L2
IXYS
MOSFET N-CH 75V 240A PLUS247-3
IXFT30N85XHV
IXFT30N85XHV
IXYS
MOSFET N-CH 850V 30A TO268
IXFN120N20
IXFN120N20
IXYS
MOSFET N-CH 200V 120A SOT-227B
IXGH50N90B2D1
IXGH50N90B2D1
IXYS
IGBT 900V 75A 400W TO247AD
IXYH16N170CV1
IXYH16N170CV1
IXYS
IGBT 1.7KV 40A TO247
IXXH60N65C4
IXXH60N65C4
IXYS
IGBT 650V 118A 455W TO247AD
IXGX75N250
IXGX75N250
IXYS
IGBT 2500V 170A 780W PLUS247
IXGP12N120A2
IXGP12N120A2
IXYS
IGBT 1200V 24A 75W TO220
IXGP12N60C
IXGP12N60C
IXYS
IGBT 600V 24A 100W TO220
IX6R11S3T/R
IX6R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC