IXTH30N50P
  • Share:

IXYS IXTH30N50P

Manufacturer No:
IXTH30N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH30N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):460W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.89
44

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH30N50P IXTH30N60P   IXTH36N50P   IXTH30N50   IXTH30N50L  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 36A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 15A, 10V 240mOhm @ 15A, 10V 170mOhm @ 500mA, 10V 170mOhm @ 500mA, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 82 nC @ 10 V 85 nC @ 10 V 227 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 25 V 5050 pF @ 25 V 5500 pF @ 25 V 5680 pF @ 25 V 10200 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 460W (Tc) 540W (Tc) 540W (Tc) 360W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

IRLML2060TRPBF
IRLML2060TRPBF
Infineon Technologies
MOSFET N-CH 60V 1.2A SOT23
ZXMP10A17GQTA
ZXMP10A17GQTA
Diodes Incorporated
MOSFET P-CH 100V 2.4A SOT223
IRFSL3006PBF
IRFSL3006PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO262
AIMW120R045M1XKSA1
AIMW120R045M1XKSA1
Infineon Technologies
SICFET N-CH 1200V 52A TO247-3
BUK9535-55A127
BUK9535-55A127
NXP USA Inc.
N-CHANNEL POWER MOSFET
NTBG015N065SC1
NTBG015N065SC1
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
BSO4420
BSO4420
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
IRFS3006PBF
IRFS3006PBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
IXTY15N20T
IXTY15N20T
IXYS
MOSFET N-CH 200V 15A TO252
AUIRFSL8403
AUIRFSL8403
Infineon Technologies
MOSFET N-CH 40V 123A TO262
IPB60R380P6ATMA1
IPB60R380P6ATMA1
Infineon Technologies
MOSFET N-CH 600V 10.6A D2PAK
FDWS5360L-F085
FDWS5360L-F085
onsemi
MOSFET N-CH 60V 60A POWER56

Related Product By Brand

DPG10I200PA
DPG10I200PA
IXYS
DIODE GEN PURP 200V 10A TO220AC
DSEP30-06B
DSEP30-06B
IXYS
DIODE GP 600V 30A ISOPLUS247
DMA10P1800PZ-TUB
DMA10P1800PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
MCC132-18IO1
MCC132-18IO1
IXYS
MOD THYRISTOR DUAL 1800V Y4-M6
IXTH2N170D2
IXTH2N170D2
IXYS
MOSFET N-CH 1700V 2A TO247
IXTA120N04T2
IXTA120N04T2
IXYS
MOSFET N-CH 40V 120A TO263
IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
IXYS
MOSFET N-CH 850V 20A TO263HV
IXFQ24N60X
IXFQ24N60X
IXYS
MOSFET N-CH 600V 24A TO3P
IXFH20N60
IXFH20N60
IXYS
MOSFET N-CH 600V 20A TO-247AD
IXFT94N30T
IXFT94N30T
IXYS
MOSFET N-CH 300V 94A TO268
IXTQ30N50P
IXTQ30N50P
IXYS
MOSFET N-CH 500V 30A TO3P
IXFX73N30Q
IXFX73N30Q
IXYS
MOSFET N-CH 300V 73A PLUS247-3