IXTH30N50
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IXYS IXTH30N50

Manufacturer No:
IXTH30N50
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH30N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 30A TO247
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:227 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH30N50 IXTH30N50P   IXTH30N50L  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 500mA, 10V 200mOhm @ 15A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 227 nC @ 10 V 70 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5680 pF @ 25 V 4150 pF @ 25 V 10200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 460W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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