IXTH260N055T2
  • Share:

IXYS IXTH260N055T2

Manufacturer No:
IXTH260N055T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH260N055T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 260A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:260A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$7.85
16

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH260N055T2 IXTH360N055T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 260A (Tc) 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 330 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V 20000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 480W (Tc) 935W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

CSD13385F5T
CSD13385F5T
Texas Instruments
MOSFET N-CH 12V 4.3A 3PICOSTAR
NTLJS3180PZTBG
NTLJS3180PZTBG
onsemi
SMALL SIGNAL FIELD-EFFECT TRANSI
IPL65R099C7AUMA1
IPL65R099C7AUMA1
Infineon Technologies
MOSFET N-CH 650V 21A 4VSON
IRL3715L
IRL3715L
Infineon Technologies
MOSFET N-CH 20V 54A TO262
SI4410DYPBF
SI4410DYPBF
Infineon Technologies
MOSFET N-CH 30V 10A 8SO
NTK3043NAT5G
NTK3043NAT5G
onsemi
MOSFET N-CH 20V 210MA SOT-723
SI3475DV-T1-GE3
SI3475DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 200V 0.95A 6-TSOP
SI4833ADY-T1-GE3
SI4833ADY-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 4.6A 8SO
MCH3377-TL-H
MCH3377-TL-H
onsemi
MOSFET P-CH 3A 20V MCPH3
IXFH14N60P3
IXFH14N60P3
IXYS
MOSFET N-CH 600V 14A TO247AD
SIR646DP-T1-GE3
SIR646DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 60A PPAK SO-8
RSJ250P10TL
RSJ250P10TL
Rohm Semiconductor
MOSFET P-CH 100V 25A LPTS

Related Product By Brand

DSEI2X101-12A
DSEI2X101-12A
IXYS
DIODE MODULE 1.2KV 91A SOT227B
DSEP30-03A
DSEP30-03A
IXYS
DIODE GEN PURP 300V 30A TO247AD
CLA15E1200NPB
CLA15E1200NPB
IXYS
SCR 1.2KV 33A TO220
IXTA48P05T
IXTA48P05T
IXYS
MOSFET P-CH 50V 48A TO263
IXTA6N50D2-TRL
IXTA6N50D2-TRL
IXYS
MOSFET N-CH 500V 6A TO263
IXFK120N20P
IXFK120N20P
IXYS
MOSFET N-CH 200V 120A TO264AA
IXFN420N10T
IXFN420N10T
IXYS
MOSFET N-CH 100V 420A SOT227B
IXTQ26P20P
IXTQ26P20P
IXYS
MOSFET P-CH 200V 26A TO3P
IXFA102N15T
IXFA102N15T
IXYS
MOSFET N-CH 150V 102A TO263
IXFX74N50P2
IXFX74N50P2
IXYS
MOSFET N-CH 500V 74A PLUS247-3
IXGH28N60BD1
IXGH28N60BD1
IXYS
IGBT 600V 40A 150W TO247AD
IXDE504D2
IXDE504D2
IXYS
IC GATE DRVR LOW-SIDE 8DFN