IXTH250N075T
  • Share:

IXYS IXTH250N075T

Manufacturer No:
IXTH250N075T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH250N075T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 250A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):550W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
554

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH250N075T IXTC250N075T   IXTF250N075T   IXTH200N075T   IXTH220N075T  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 250A (Tc) 128A (Tc) 140A (Tc) 200A (Tc) 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 4.4mOhm @ 25A, 10V 4.4mOhm @ 50A, 10V 5mOhm @ 25A, 10V 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 200 nC @ 10 V 160 nC @ 10 V 165 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V 9900 pF @ 25 V 9900 pF @ 25 V 6800 pF @ 25 V 7700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 550W (Tc) 160W (Tc) 200W (Tc) 430W (Tc) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™ ISOPLUS i4-PAC™ TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 ISOPLUS220™ i4-Pac™-5 TO-247-3 TO-247-3

Related Product By Categories

UPA1807GR-9JG-E1-A
UPA1807GR-9JG-E1-A
Renesas Electronics America Inc
MOSFET N-CH 30V 12A 8TSSOP
FDW258P
FDW258P
Fairchild Semiconductor
MOSFET P-CH 12V 9A 8TSSOP
STFI4N62K3
STFI4N62K3
STMicroelectronics
MOSFET N CH 620V 3.8A I2PAKFP
TK170V65Z,LQ
TK170V65Z,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 18A 5DFN
SI8447DB-T2-E1
SI8447DB-T2-E1
Vishay Siliconix
MOSFET P-CH 20V 11A 6MICRO FOOT
IPB60R099CPATMA1
IPB60R099CPATMA1
Infineon Technologies
MOSFET N-CH 600V 31A TO263-3
APT50M65JFLL
APT50M65JFLL
Microchip Technology
MOSFET N-CH 500V 58A ISOTOP
DMP2035UVTQ-7
DMP2035UVTQ-7
Diodes Incorporated
MOSFET P-CH 20V 7.2A TSOT26
HUF76129S3ST
HUF76129S3ST
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DMN31D5L-13
DMN31D5L-13
Diodes Incorporated
MOSFET N-CH 30V 500MA SOT23 T&R
2SJ438,MDKQ(J
2SJ438,MDKQ(J
Toshiba Semiconductor and Storage
MOSFET P-CH TO220NIS
BUK9Y98-80E,115
BUK9Y98-80E,115
NXP USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8

Related Product By Brand

MDNA140P2200TG
MDNA140P2200TG
IXYS
BIPOLAR MODULE - DIODE TO-240AA
DSEP30-03A
DSEP30-03A
IXYS
DIODE GEN PURP 300V 30A TO247AD
MCC95-16IO1
MCC95-16IO1
IXYS
BIPOLAR MODULE - THYRISTOR TO-2
IXTA60N20X4
IXTA60N20X4
IXYS
MOSFET ULTRA X4 200V 60A TO-263
IXFA130N10T2
IXFA130N10T2
IXYS
MOSFET N-CH 100V 130A TO263
IXFT94N30P3
IXFT94N30P3
IXYS
MOSFET N-CH 300V 94A TO268
IXFX80N50Q3
IXFX80N50Q3
IXYS
MOSFET N-CH 500V 80A PLUS247-3
IXFP5N50PM
IXFP5N50PM
IXYS
MOSFET N-CH 500V 3.2A TO220AB
IXBA16N170AHV
IXBA16N170AHV
IXYS
REVERSE CONDUCTING IGBT
IXYA20N120A4HV
IXYA20N120A4HV
IXYS
DISC IGBT XPT-GENX4 TO-263D2
IXGR60N60C2
IXGR60N60C2
IXYS
IGBT 600V 75A 250W ISOPLUS247
IXGH30N60B4
IXGH30N60B4
IXYS
IGBT 600V 66A 190W TO247