IXTH20N65X2
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IXYS IXTH20N65X2

Manufacturer No:
IXTH20N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH20N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 20A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):290W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH20N65X2 IXTH24N65X2   IXTH20N65X  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 24A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 10A, 10V 145mOhm @ 12A, 10V 210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 36 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V 2060 pF @ 25 V 1390 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 290W (Tc) 390W (Tc) 320W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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