IXTH1N200P3HV
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IXYS IXTH1N200P3HV

Manufacturer No:
IXTH1N200P3HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH1N200P3HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 2000V 1A TO247HV
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247HV
Package / Case:TO-247-3 Variant
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Similar Products

Part Number IXTH1N200P3HV IXTH1N300P3HV   IXTH3N200P3HV  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V 3000 V 2000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 1A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V 50Ohm @ 500mA, 10V 8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V 30.6 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V 895 pF @ 25 V 1860 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 195W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247HV TO-247HV TO-247 (IXTH)
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3

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