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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
IXTH1N170DHV
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IXYS IXTH1N170DHV
Manufacturer No:
IXTH1N170DHV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH1N170DHV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1700V 1A TO247HV
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1700 V
Current - Continuous Drain (Id) @ 25°C:
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
0V
Rds On (Max) @ Id, Vgs:
16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3090 pF @ 25 V
FET Feature:
Depletion Mode
Power Dissipation (Max):
290W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247HV
Package / Case:
TO-247-3 Variant
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UnitPrice:
$15.98
Quantity:
28
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