IXTH1N100
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IXYS IXTH1N100

Manufacturer No:
IXTH1N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH1N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 1.5A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH1N100 IXTH12N100   IXTH14N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 12A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 1A, 10V 1.05Ohm @ 6A, 10V 820mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 170 nC @ 10 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V 4000 pF @ 25 V 5650 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 60W (Tc) 300W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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