IXTH180N10T
  • Share:

IXYS IXTH180N10T

Manufacturer No:
IXTH180N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH180N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 180A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$7.19
91

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH180N10T IXTC180N10T   IXTH130N10T   IXTH160N10T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 90A (Tc) 130A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V - 9.1mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA - 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V - 104 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±30V - ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V - 5080 pF @ 25 V 6600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 480W (Tc) 150W (Tc) 360W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™ TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 ISOPLUS220™ TO-247-3 TO-247-3

Related Product By Categories

ZXMN10A11GTA
ZXMN10A11GTA
Diodes Incorporated
MOSFET N-CH 100V 1.7A SOT223
SQJA26EP-T1_GE3
SQJA26EP-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 30 V (D-S)
FQU2N50BTU-WS
FQU2N50BTU-WS
onsemi
MOSFET N-CH 500V 1.6A IPAK
SI7880ADP-T1-GE3
SI7880ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
IRF7406PBF
IRF7406PBF
Infineon Technologies
MOSFET P-CH 30V 5.8A 8SO
NTD4806N-1G
NTD4806N-1G
onsemi
MOSFET N-CH 30V 11.3A/79A IPAK
STD7NM80-1
STD7NM80-1
STMicroelectronics
MOSFET N-CH 800V 6.5A IPAK
SUP60N06-12P-E3
SUP60N06-12P-E3
Vishay Siliconix
MOSFET N-CH 60V 60A TO220AB
DMG4N60SK3-13
DMG4N60SK3-13
Diodes Incorporated
MOSFET N-CH 600V 3.7A TO252 T&R
FDB86360_SN00307
FDB86360_SN00307
onsemi
MOSFET N-CH 80V 110A D2PAK
BSL302SNH6327XTSA1
BSL302SNH6327XTSA1
Infineon Technologies
MOSFET N-CH 30V 7.1A TSOP-6
BUK654R0-75C,127
BUK654R0-75C,127
NXP USA Inc.
MOSFET N-CH 75V 120A TO220AB

Related Product By Brand

DHG10I1200PA
DHG10I1200PA
IXYS
DIODE GEN PURP 1.2KV 10A TO220AC
DSEI25-06A
DSEI25-06A
IXYS
POWER DIODE DISCRETES-FRED TO-22
MCC132-12IO1
MCC132-12IO1
IXYS
MOD THYRISTOR DUAL 1200V Y4-M6
CME30E1600PZ-TRL
CME30E1600PZ-TRL
IXYS
SCR 1.6KV 35A TO263
IXFP10N60P
IXFP10N60P
IXYS
MOSFET N-CH 600V 10A TO220AB
IXTQ96N20P
IXTQ96N20P
IXYS
MOSFET N-CH 200V 96A TO3P
IXFN110N85X
IXFN110N85X
IXYS
MOSFET N-CH 850V 110A SOT227B
IXFK90N20Q
IXFK90N20Q
IXYS
MOSFET N-CH 200V 90A TO264AA
IXTC160N085T
IXTC160N085T
IXYS
MOSFET N-CH 85V 110A ISOPLUS220
IXFK80N15Q
IXFK80N15Q
IXYS
MOSFET N-CH 150V 80A TO264AA
IXA12IF1200TC-TUB
IXA12IF1200TC-TUB
IXYS
IGBT 1200V 20A 85W TO268
IXBD4411PI
IXBD4411PI
IXYS
IC GATE DRVR HIGH-SIDE 16DIP