IXTH180N10T
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IXYS IXTH180N10T

Manufacturer No:
IXTH180N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH180N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 180A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH180N10T IXTC180N10T   IXTH130N10T   IXTH160N10T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 90A (Tc) 130A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V - 9.1mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA - 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V - 104 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±30V - ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V - 5080 pF @ 25 V 6600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 480W (Tc) 150W (Tc) 360W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™ TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 ISOPLUS220™ TO-247-3 TO-247-3

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