IXTH160N10T
  • Share:

IXYS IXTH160N10T

Manufacturer No:
IXTH160N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH160N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 160A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:132 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.84
100

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH160N10T IXTH180N10T   IXTH160N15T   IXTC160N10T   IXTH130N10T  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 150 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 180A (Tc) 160A (Tc) 83A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 6.4mOhm @ 25A, 10V 9.6mOhm @ 500mA, 10V 7.5mOhm @ 25A, 10V 9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 5V @ 1mA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 151 nC @ 10 V 160 nC @ 10 V 132 nC @ 10 V 104 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 6900 pF @ 25 V 8800 pF @ 25 V 6600 pF @ 25 V 5080 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 430W (Tc) 480W (Tc) 830W (Tc) 140W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) ISOPLUS220™ TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3 ISOPLUS220™ TO-247-3

Related Product By Categories

MMSF7N03ZR2
MMSF7N03ZR2
onsemi
N-CHANNEL POWER MOSFET
BUK9Y25-60E,115
BUK9Y25-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 34A LFPAK56
FQA36P15
FQA36P15
onsemi
MOSFET P-CH 150V 36A TO3PN
FQI2N80TU
FQI2N80TU
Fairchild Semiconductor
MOSFET N-CH 800V 2.4A I2PAK
PSMN1R2-55SLH
PSMN1R2-55SLH
Nexperia USA Inc.
N-CHANNEL 55 V, 1.03 MOHM, 330 A
IRFU024NPBF
IRFU024NPBF
Infineon Technologies
MOSFET N-CH 55V 17A IPAK
IPP65R110CFDXKSA2
IPP65R110CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 31.2A TO220-3
IRF740LCSTRL
IRF740LCSTRL
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
IXTN21N100
IXTN21N100
IXYS
MOSFET N-CH 1000V 21A SOT227B
BTS247ZE3043AKSA1
BTS247ZE3043AKSA1
Infineon Technologies
MOSFET N-CH 55V 33A TO220-5-43
STP30NM30N
STP30NM30N
STMicroelectronics
MOSFET N-CH 300V 30A TO220AB
NTF3055-100T1G-IRH1
NTF3055-100T1G-IRH1
onsemi
MOSFET N-CH 60V 3A SOT223

Related Product By Brand

VBO52-08NO7
VBO52-08NO7
IXYS
BRIDGE RECT 1P 800V 52A PWS-D
CLE20E1200PC-TUB
CLE20E1200PC-TUB
IXYS
SCR 1.2KV 35A TO263
IXTX210P10T
IXTX210P10T
IXYS
MOSFET P-CH 100V 210A PLUS247-3
IXFK220N17T2
IXFK220N17T2
IXYS
MOSFET N-CH 170V 220A TO264AA
IXTY1R4N120PHV
IXTY1R4N120PHV
IXYS
MOSFET N-CH 1200V 1.4A TO252
IXTP15P15T
IXTP15P15T
IXYS
MOSFET P-CH 150V 15A TO220AB
IXFR32N80P
IXFR32N80P
IXYS
MOSFET N-CH 800V 20A ISOPLUS247
IXFN150N15
IXFN150N15
IXYS
MOSFET N-CH 150V 150A SOT227B
IXTQ40N50Q
IXTQ40N50Q
IXYS
MOSFET N-CH 500V 40A TO3P
IXFT50N20
IXFT50N20
IXYS
MOSFET N-CH 200V 50A TO268
IXBH9N160G
IXBH9N160G
IXYS
IGBT 1600V 9A 100W TO247AD
IXGR40N60CD1
IXGR40N60CD1
IXYS
IGBT 600V 75A 200W ISOPLUS247