IXTH12N100Q
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IXYS IXTH12N100Q

Manufacturer No:
IXTH12N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH12N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 12A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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In Stock

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270

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Similar Products

Part Number IXTH12N100Q IXTH12N100   IXTH12N100L  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 20V
Rds On (Max) @ Id, Vgs - 1.05Ohm @ 6A, 10V 1.3Ohm @ 500mA, 20V
Vgs(th) (Max) @ Id - 4.5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 170 nC @ 10 V 155 nC @ 20 V
Vgs (Max) - ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds - 4000 pF @ 25 V 2500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 300W (Tc) 400W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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