IXTH12N100L
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IXYS IXTH12N100L

Manufacturer No:
IXTH12N100L
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH12N100L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 12A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 500mA, 20V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 20 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH12N100L IXTH12N100Q   IXTH12N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V - 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 500mA, 20V - 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA - 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 20 V - 170 nC @ 10 V
Vgs (Max) ±30V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V - 4000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 400W (Tc) - 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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