IXTH12N100L
  • Share:

IXYS IXTH12N100L

Manufacturer No:
IXTH12N100L
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH12N100L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 12A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 500mA, 20V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 20 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$21.96
39

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH12N100L IXTH12N100Q   IXTH12N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V - 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 500mA, 20V - 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA - 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 20 V - 170 nC @ 10 V
Vgs (Max) ±30V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V - 4000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 400W (Tc) - 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BUK9230-55A/C1118
BUK9230-55A/C1118
NXP USA Inc.
N-CHANNEL POWER MOSFET
BUK962R8-30B,118
BUK962R8-30B,118
Nexperia USA Inc.
MOSFET N-CH 30V 75A D2PAK
SIR418DP-T1-GE3
SIR418DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 40A PPAK SO-8
IXTT6N120
IXTT6N120
IXYS
MOSFET N-CH 1200V 6A TO268
CSD16321Q5C
CSD16321Q5C
Texas Instruments
MOSFET N-CH 25V 31A/100A 8VSON
CPH3360-TL-W
CPH3360-TL-W
onsemi
CPH3360 - P-CHANNEL POWER MOSFET
IRFS52N15DPBF
IRFS52N15DPBF
Infineon Technologies
MOSFET N-CH 150V 51A D2PAK
ZXMN10B08E6TC
ZXMN10B08E6TC
Diodes Incorporated
MOSFET N-CH 100V 1.6A SOT26
FDFS6N754
FDFS6N754
onsemi
MOSFET N-CH 30V 4A 8SOIC
SI5475DDC-T1-GE3
SI5475DDC-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 6A 1206-8
APT5014SLLG/TR
APT5014SLLG/TR
Microsemi Corporation
MOSFET N-CH 500V 35A TO247
RQ3E080GNTB
RQ3E080GNTB
Rohm Semiconductor
MOSFET N-CH 30V 8A 8HSMT

Related Product By Brand

VUO160-16NO7
VUO160-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 175A PWS-E1
DPH30IS600HI
DPH30IS600HI
IXYS
DIODE ARRAY 600V 30A ISOPLUS247
VVZ40-16IO1
VVZ40-16IO1
IXYS
RECT BRIDGE 3PH 34A 1600V KAMM
MCD132-12IO1
MCD132-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y4-M6
CS35-12IO4
CS35-12IO4
IXYS
SCR 1.2KV 120A TO208AC
IXTP20N65X2
IXTP20N65X2
IXYS
MOSFET N-CH 650V 20A TO220AB
IXFH230N10T
IXFH230N10T
IXYS
MOSFET N-CH 100V 230A TO247AD
IXFH70N20Q3
IXFH70N20Q3
IXYS
MOSFET N-CH 200V 70A TO247AD
IXFH88N30P
IXFH88N30P
IXYS
MOSFET N-CH 300V 88A TO247AD
IXFT30N60P
IXFT30N60P
IXYS
MOSFET N-CH 600V 30A TO268
IXGR60N60B2
IXGR60N60B2
IXYS
IGBT 600V 75A 250W ISOPLUS247
IXGT30N60C2
IXGT30N60C2
IXYS
IGBT 600V 70A 190W TO268