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| Part Number | IXTH11P50 | IXTH10P50 |
|---|---|---|
| Manufacturer | IXYS | IXYS |
| Product Status | Active | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V | 900mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 160 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V | 4700 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-247 (IXTH) | TO-247 (IXTH) |
| Package / Case | TO-247-3 | TO-247-3 |
