IXTH10P60
  • Share:

IXYS IXTH10P60

Manufacturer No:
IXTH10P60
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH10P60 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 10A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$11.43
71

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTH10P60 IXTH10P50  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V 900mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V 4700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

TSM3443CX6 RFG
TSM3443CX6 RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4.7A SOT26
IRFP243
IRFP243
Harris Corporation
N-CHANNEL POWER MOSFET
STO67N60DM6
STO67N60DM6
STMicroelectronics
MOSFET N-CH 600V 33A TOLL
SI7852ADP-T1-E3
SI7852ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
IPD60R385CPATMA1
IPD60R385CPATMA1
Infineon Technologies
MOSFET N-CH 600V 9A TO252-3
IXTQ150N15P
IXTQ150N15P
IXYS
MOSFET N-CH 150V 150A TO3P
CPH6445-TL-W
CPH6445-TL-W
onsemi
MOSFET N-CH 60V 3.5A 6CPH
IRFB7746PBF
IRFB7746PBF
Infineon Technologies
MOSFET N-CH 75V 59A TO220AB
TK6A65D(STA4,Q,M)
TK6A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 6A TO220SIS
IPD20N03L
IPD20N03L
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
TPH3208LS
TPH3208LS
Transphorm
GANFET N-CH 650V 20A 3PQFN
FCPF600N65S3R0L
FCPF600N65S3R0L
onsemi
MOSFET N-CH 650V 6A TO220F-3

Related Product By Brand

DPG15I200PA
DPG15I200PA
IXYS
DIODE GEN PURP 200V 15A TO220AC
DSI30-12AC
DSI30-12AC
IXYS
DIODE GP 1.2KV 30A ISOPLUS220
IXFT340N075T2
IXFT340N075T2
IXYS
MOSFET N-CH 75V 340A TO268
IXFN40N90P
IXFN40N90P
IXYS
MOSFET N-CH 900V 33A SOT227B
IXTH64N65X
IXTH64N65X
IXYS
MOSFET N-CH 650V 64A TO247
IXTR210P10T
IXTR210P10T
IXYS
MOSFET P-CH 100V 195A ISOPLUS247
IXFX44N55Q
IXFX44N55Q
IXYS
MOSFET N-CH 550V 44A PLUS247-3
IXFP5N50P3
IXFP5N50P3
IXYS
MOSFET N-CH 500V 5A TO220AB
IXSN52N60AU1
IXSN52N60AU1
IXYS
IGBT MOD 600V 80A 250W SOT227B
IXBH32N300
IXBH32N300
IXYS
IGBT 3000V 80A 400W TO247
IXXP12N65B4D1
IXXP12N65B4D1
IXYS
IGBT
IXGT31N60D1
IXGT31N60D1
IXYS
IGBT 600V 60A 150W TO268