IXTH10N100D2
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IXYS IXTH10N100D2

Manufacturer No:
IXTH10N100D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH10N100D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 10A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5320 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):695W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXTH10N100D2 IXTH10N100D  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 5A, 10V 1.4Ohm @ 10A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 5 V 130 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5320 pF @ 25 V 2500 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 695W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

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