IXTH102N25T
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IXYS IXTH102N25T

Manufacturer No:
IXTH102N25T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTH102N25T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 102A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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In Stock

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560

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Similar Products

Part Number IXTH102N25T IXTC102N25T   IXTH102N15T   IXTH102N20T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 150 V 200 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) - 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 10V 10V
Rds On (Max) @ Id, Vgs - - 18mOhm @ 500mA, 10V 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id - - 5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - 87 nC @ 10 V 114 nC @ 10 V
Vgs (Max) - - ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds - - 5220 pF @ 25 V 6800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - - 455W (Tc) 750W (Tc)
Operating Temperature - - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) ISOPLUS220™ TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 ISOPLUS220™ TO-247-3 TO-247-3

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