IXTF200N10T
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IXYS IXTF200N10T

Manufacturer No:
IXTF200N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTF200N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 90A I4PAC
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:9400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS i4-PAC™
Package / Case:i4-Pac™-5
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Similar Products

Part Number IXTF200N10T IXTH200N10T   IXTC200N10T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 200A (Tc) 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V 5.5mOhm @ 50A, 10V 6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 152 nC @ 10 V 152 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 9400 pF @ 25 V 9400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 156W (Tc) 550W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS i4-PAC™ TO-247 (IXTH) ISOPLUS220™
Package / Case i4-Pac™-5 TO-247-3 ISOPLUS220™

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