IXTF1N450
  • Share:

IXYS IXTF1N450

Manufacturer No:
IXTF1N450
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTF1N450 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 4500V 900MA I4PAC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):4500 V
Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS i4-PAC™
Package / Case:i4-Pac™-5 (3 Leads)
0 Remaining View Similar

In Stock

$98.41
10

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTF1N450 IXTF1N400  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4500 V 4000 V
Current - Continuous Drain (Id) @ 25°C 900mA (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85Ohm @ 50mA, 10V 60Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 25 V 2530 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS i4-PAC™ ISOPLUS i4-PAC™
Package / Case i4-Pac™-5 (3 Leads) i4-Pac™-5 (3 Leads)

Related Product By Categories

FDD8782
FDD8782
onsemi
MOSFET N-CH 25V 35A TO252AA
FDS3580
FDS3580
onsemi
MOSFET N-CH 80V 7.6A 8SOIC
IRF9630PBF-BE3
IRF9630PBF-BE3
Vishay Siliconix
MOSFET P-CH 200V 6.5A TO220AB
IXTP05N100
IXTP05N100
IXYS
MOSFET N-CH 1000V 750MA TO220AB
AUIRFR8403TRL
AUIRFR8403TRL
Infineon Technologies
MOSFET N-CH 40V 100A DPAK
DMNH45M7SCT
DMNH45M7SCT
Diodes Incorporated
MOSFET N-CH 40V 220A TO220AB
TK15A50D(STA4,Q,M)
TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 15A TO220SIS
BUK625R0-40C,118
BUK625R0-40C,118
NXP Semiconductors
NEXPERIA BUK625R0-40C - 90A, 40V
SPN03N60C3
SPN03N60C3
Infineon Technologies
MOSFET N-CH 650V 700MA SOT223-4
TPCA8120,LQ(CM
TPCA8120,LQ(CM
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 45A 8SOP
NVB6410ANT4G
NVB6410ANT4G
onsemi
MOSFET N-CH 100V 76A D2PAK
IPD60R400CEATMA1
IPD60R400CEATMA1
Infineon Technologies
MOSFET N-CH 600V 10.3A TO252-3

Related Product By Brand

DSA17-12A
DSA17-12A
IXYS
DIODE AVALANCHE 1.2KV 25A DO203
MCD132-14IO1
MCD132-14IO1
IXYS
MOD THYRISTOR/DIODE 1400V Y4-M6
CMA20E1600PZ-TRL
CMA20E1600PZ-TRL
IXYS
SCR 1.6KV 31A TO263
CS60-12IO1
CS60-12IO1
IXYS
SCR 1.2KV 75A PLUS247-3
IXFT150N30X3HV
IXFT150N30X3HV
IXYS
MOSFET N-CH 300V 150A TO268HV
IXTP1N100P
IXTP1N100P
IXYS
MOSFET N-CH 1000V 1A TO220AB
IXTA102N15T
IXTA102N15T
IXYS
MOSFET N-CH 150V 102A TO263
IXTA62N15P-TRL
IXTA62N15P-TRL
IXYS
MOSFET N-CH 150V 62A TO263
IXTP200N085T
IXTP200N085T
IXYS
MOSFET N-CH 85V 200A TO220AB
IXYH40N120C3
IXYH40N120C3
IXYS
IGBT 1200V 70A 577W TO247
IXYK110N120A4
IXYK110N120A4
IXYS
IGBT 1200V 110A GENX4 XPT TO-264
IXGX300N60B3
IXGX300N60B3
IXYS
IGBT 600V 1000W PLUS247