IXTF1N400
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IXYS IXTF1N400

Manufacturer No:
IXTF1N400
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTF1N400 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 4000V 1A I4PAC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):4000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS i4-PAC™
Package / Case:i4-Pac™-5 (3 Leads)
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Similar Products

Part Number IXTF1N400 IXTF1N450  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4000 V 4500 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60Ohm @ 500mA, 10V 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 25 V 1730 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS i4-PAC™ ISOPLUS i4-PAC™
Package / Case i4-Pac™-5 (3 Leads) i4-Pac™-5 (3 Leads)

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