IXTC250N075T
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IXYS IXTC250N075T

Manufacturer No:
IXTC250N075T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTC250N075T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 128A ISOPLUS220
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXTC250N075T IXTF250N075T   IXTH250N075T   IXTC220N075T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc) 140A (Tc) 250A (Tc) 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V 4.4mOhm @ 50A, 10V 4mOhm @ 50A, 10V 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 200 nC @ 10 V 165 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V 9900 pF @ 25 V 9900 pF @ 25 V 7700 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 200W (Tc) 550W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS i4-PAC™ TO-247 (IXTH) ISOPLUS220™
Package / Case ISOPLUS220™ i4-Pac™-5 TO-247-3 ISOPLUS220™

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