IXTC180N10T
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IXYS IXTC180N10T

Manufacturer No:
IXTC180N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTC180N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 90A ISOPLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXTC180N10T IXTH180N10T   IXTC160N10T  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 180A (Tc) 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 6.4mOhm @ 25A, 10V 7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 151 nC @ 10 V 132 nC @ 10 V
Vgs (Max) - ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 6900 pF @ 25 V 6600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 480W (Tc) 140W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS220™ TO-247 (IXTH) ISOPLUS220™
Package / Case ISOPLUS220™ TO-247-3 ISOPLUS220™

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