IXYS-IXTB30N100L - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1000 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	545 nC @ 20 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	13200 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	800W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PLUS264™
Package / Case:	TO-264-3, TO-264AA

IXYS IXTB30N100L