IXTA90N055T2
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IXYS IXTA90N055T2

Manufacturer No:
IXTA90N055T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA90N055T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 90A TO263
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IXTA90N055T2 IXTA90N075T2   IXTA90N055T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 25A, 10V 10mOhm @ 25A, 10V 8.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 54 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 25 V 3290 pF @ 25 V 2500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 180W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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