IXTA80N10T7
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IXYS IXTA80N10T7

Manufacturer No:
IXTA80N10T7
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA80N10T7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 80A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3040 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7 (IXTA)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Similar Products

Part Number IXTA80N10T7 IXTA80N10T  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V 14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 25 V 3040 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 230W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-7 (IXTA) TO-263AA
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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