IXTA60N10T
  • Share:

IXYS IXTA60N10T

Manufacturer No:
IXTA60N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA60N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):176W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.79
146

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA60N10T IXTA80N10T   IXTA60N20T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 80A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V 14mOhm @ 25A, 10V 40mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 5V @ 100µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 60 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V 3040 pF @ 25 V 4530 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 176W (Tc) 230W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQA8N80
FQA8N80
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SIRA50DP-T1-RE3
SIRA50DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 40V 62.5A/100A PPAK
FDD8770
FDD8770
onsemi
MOSFET N-CH 25V 35A TO252AA
IXTA3N100P-TRL
IXTA3N100P-TRL
IXYS
MOSFET N-CH 1000V 3A TO263
IXTA170N075T2
IXTA170N075T2
IXYS
MOSFET N-CH 75V 170A TO263
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
NTD24N06L-1G
NTD24N06L-1G
onsemi
MOSFET N-CH 60V 24A IPAK
SI4446DY-T1-GE3
SI4446DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 3.9A 8SO
STF13N95K3
STF13N95K3
STMicroelectronics
MOSFET N-CH 950V 10A TO220FP
2SK1859-E
2SK1859-E
Renesas Electronics America Inc
MOSFET N-CH 900V 6A TO3P
NTMFS4833NAT1G
NTMFS4833NAT1G
onsemi
MOSFET N-CH 30V 16A/191A 5DFN
TSM4N80CZ C0G
TSM4N80CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 4A TO220

Related Product By Brand

FBE22-06N1
FBE22-06N1
IXYS
BRIDGE RECT 1P 600V 20A I4-PAC
MDA95-22N1B
MDA95-22N1B
IXYS
DIODE MODULE 2.2KV 120A TO240AA
DGS10-018AS
DGS10-018AS
IXYS
DIODE SCHOTTKY 180V 15A TO263AB
MCC95-12IO1B
MCC95-12IO1B
IXYS
THYRISTOR MODULE 1200V 2X116A
SV6050NA2RP
SV6050NA2RP
IXYS
AEC-Q GRADE 50 AMP STANDARD HIGH
IXTN200N10L2
IXTN200N10L2
IXYS
MOSFET N-CH 100V 178A SOT227B
IXTA102N15T
IXTA102N15T
IXYS
MOSFET N-CH 150V 102A TO263
IXTA08N100D2HV-TRL
IXTA08N100D2HV-TRL
IXYS
MOSFET N-CH 1000V 800MA TO263HV
IXFN106N20
IXFN106N20
IXYS
MOSFET N-CH 200V 106A SOT-227B
IXFB38N100Q2
IXFB38N100Q2
IXYS
MOSFET N-CH 1000V 38A PLUS264
IXFH24N50Q
IXFH24N50Q
IXYS
MOSFET N-CH 500V 24A TO247AD
IXFH150N17T
IXFH150N17T
IXYS
MOSFET N-CH 175V 150A TO247AD