IXTA3N50D2
  • Share:

IXYS IXTA3N50D2

Manufacturer No:
IXTA3N50D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N50D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 3A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1070 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.14
27

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA3N50D2 IXTA6N50D2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 0V 500mOhm @ 3A, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5 V 96 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 25 V 2800 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 125W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STFW1N105K3
STFW1N105K3
STMicroelectronics
MOSFET N-CH 1050V 1.4A ISOWATT
SIHA6N65E-GE3
SIHA6N65E-GE3
Vishay Siliconix
N-CHANNEL 650V
SI4436DY-T1-GE3
SI4436DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 8A 8SO
TK40E10N1,S1X
TK40E10N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 100V 90A TO220
IPB60R099C6ATMA1
IPB60R099C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 37.9A D2PAK
RM180N60T2
RM180N60T2
Rectron USA
MOSFET N-CH 60V 180A TO220-3
IPI600N25N3GAKSA1
IPI600N25N3GAKSA1
Infineon Technologies
MOSFET N-CH 250V 25A TO262-3
IXTP32N65X
IXTP32N65X
IXYS
MOSFET N-CH 650V 32A TO220-3
FQP4N60
FQP4N60
onsemi
MOSFET N-CH 600V 4.4A TO220-3
IXTQ72N20T
IXTQ72N20T
IXYS
MOSFET N-CH 200V 72A TO3P
FQB50N06TM
FQB50N06TM
onsemi
MOSFET N-CH 60V 50A D2PAK
NP88N04KUG-E1-AY
NP88N04KUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 88A TO263

Related Product By Brand

IXTY01N100D-TRL
IXTY01N100D-TRL
IXYS
MOSFET N-CH 1000V 400MA TO252AA
IXFX32N100P
IXFX32N100P
IXYS
MOSFET N-CH 1000V 32A PLUS247-3
IXFQ50N60P3
IXFQ50N60P3
IXYS
MOSFET N-CH 600V 50A TO3P
IXTH140N075L2
IXTH140N075L2
IXYS
MOSFET N-CH 75V 140A TO247
IXFN20N120
IXFN20N120
IXYS
MOSFET N-CH 1200V 20A SOT-227B
IXTA88N085T
IXTA88N085T
IXYS
MOSFET N-CH 85V 88A TO263
IXFH15N100
IXFH15N100
IXYS
MOSFET N-CH 1000V 15A TO247AD
IXTQ120N15T
IXTQ120N15T
IXYS
MOSFET N-CH 150V 120A TO3P
IXGP2N100A
IXGP2N100A
IXYS
IGBT 1000V 4A 25W TO220AB
IXGT32N60BD1
IXGT32N60BD1
IXYS
IGBT 600V 60A 200W TO268
IXCP40M45A
IXCP40M45A
IXYS
IC CURRENT REGULATOR TO220AB
IXJ611S1
IXJ611S1
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC