IXTA3N120HV
  • Share:

IXYS IXTA3N120HV

Manufacturer No:
IXTA3N120HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N120HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 3A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263HV
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$7.87
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA3N120HV IXTA3N150HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V 7.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 38.6 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 1375 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263HV TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STW56N65DM2
STW56N65DM2
STMicroelectronics
MOSFET N-CH 650V 48A TO247
ATP405-TL-H
ATP405-TL-H
onsemi
MOSFET N-CH 100V 40A ATPAK
FQP19N20
FQP19N20
onsemi
MOSFET N-CH 200V 19.4A TO220-3
IRF640STRRPBF
IRF640STRRPBF
Vishay Siliconix
MOSFET N-CH 200V 18A TO263
STB30N80K5
STB30N80K5
STMicroelectronics
MOSFET N-CHANNEL 800V 24A D2PAK
RM120N30DF
RM120N30DF
Rectron USA
MOSFET N-CHANNEL 30V 120A 8DFN
SIHG21N80AEF-GE3
SIHG21N80AEF-GE3
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
DMNH10H021SPSW-13
DMNH10H021SPSW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
IRL3715ZCSPBF
IRL3715ZCSPBF
Infineon Technologies
MOSFET N-CH 20V 50A D2PAK
IPI126N10N3 G
IPI126N10N3 G
Infineon Technologies
MOSFET N-CH 100V 58A TO262-3
SI7668ADP-T1-E3
SI7668ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
TSM3N90CI C0G
TSM3N90CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A ITO220AB

Related Product By Brand

VBO13-16NO2
VBO13-16NO2
IXYS
BRIDGE RECT 1P 1.6KV 18A FO-A
DSA70C200HB
DSA70C200HB
IXYS
DIODE ARRAY SCHOTTKY 200V TO247
DSEP15-06AS-TRL
DSEP15-06AS-TRL
IXYS
POWER DIODE DISCRETES-FRED TO-26
MCC19-08IO8B
MCC19-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
IXTP48N20T
IXTP48N20T
IXYS
MOSFET N-CH 200V 48A TO220AB
IXFN38N100Q2
IXFN38N100Q2
IXYS
MOSFET N-CH 1000V 38A SOT-227
IXFC60N20
IXFC60N20
IXYS
MOSFET N-CH 200V 60A ISOPLUS220
IXYH16N170C
IXYH16N170C
IXYS
IGBT 1.7KV 40A TO247
IXBT6N170
IXBT6N170
IXYS
IGBT 1700V 12A 75W TO268
IXGH50N60B2
IXGH50N60B2
IXYS
IGBT 600V 75A 400W TO247
IXBT20N360HV
IXBT20N360HV
IXYS
IGBT 3600V 70A TO-268HV
IXCY50M45A
IXCY50M45A
IXYS
IC CURRENT REGULATOR DPAK