IXTA3N120HV
  • Share:

IXYS IXTA3N120HV

Manufacturer No:
IXTA3N120HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N120HV Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 3A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263HV
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$7.87
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA3N120HV IXTA3N150HV  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V 7.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 38.6 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 1375 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263HV TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF4905LPBF
IRF4905LPBF
Infineon Technologies
MOSFET P-CH 55V 42A TO262
RJK1562DJE-00#Z0
RJK1562DJE-00#Z0
Renesas Electronics America Inc
MOSFET N-CH 150V 1A TO92MOD
IRF530STRLPBF
IRF530STRLPBF
Vishay Siliconix
MOSFET N-CH 100V 14A D2PAK
SIR416DP-T1-GE3
SIR416DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 50A PPAK SO-8
SFM9014TF
SFM9014TF
Fairchild Semiconductor
MOSFET P-CH 60V 1.8A SOT223-4
IRFH5007TRPBF
IRFH5007TRPBF
Infineon Technologies
MOSFET N-CH 75V 17A/100A 8PQFN
HAF1009-90STL
HAF1009-90STL
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
IXFN38N100Q2
IXFN38N100Q2
IXYS
MOSFET N-CH 1000V 38A SOT-227
ZVN4306GVTC
ZVN4306GVTC
Diodes Incorporated
MOSFET N-CH 60V 2.1A SOT223
FQD7P20TM_F080
FQD7P20TM_F080
onsemi
MOSFET P-CH 200V 5.7A DPAK
DMS3016SSSA-13
DMS3016SSSA-13
Diodes Incorporated
MOSFET N-CH 30V 9.8A 8SO
RD3U040CNTL1
RD3U040CNTL1
Rohm Semiconductor
MOSFET N-CH 250V 4A TO252

Related Product By Brand

VUO36-18NO8
VUO36-18NO8
IXYS
BRIDGE RECT 3P 1.8KV 27A FO-B
MEA300-06DA
MEA300-06DA
IXYS
DIODE MODULE 600V 304A Y4-M6
MDA95-22N1B
MDA95-22N1B
IXYS
DIODE MODULE 2.2KV 120A TO240AA
DGSK40-025A
DGSK40-025A
IXYS
DIODE ARRAY SCHOTTKY 250V TO220
IXFH16N50P3
IXFH16N50P3
IXYS
MOSFET N-CH 500V 16A TO247AD
IXTH102N15T
IXTH102N15T
IXYS
MOSFET N-CH 150V 102A TO247
IXTH10P50
IXTH10P50
IXYS
MOSFET P-CH 500V 10A TO247
IXFR24N50Q
IXFR24N50Q
IXYS
MOSFET N-CH 500V 22A ISOPLUS247
IXYH80N90C3
IXYH80N90C3
IXYS
IGBT 900V 165A 830W TO247
IXA12IF1200PB
IXA12IF1200PB
IXYS
IGBT 1200V 20A 85W TO220
IXGR35N120BD1
IXGR35N120BD1
IXYS
IGBT 1200V 54A 250W ISOPLUS247
IXGP30N60C3
IXGP30N60C3
IXYS
IGBT 600V 60A 220W TO220AB