IXTA3N110
  • Share:

IXYS IXTA3N110

Manufacturer No:
IXTA3N110
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N110 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1100V 3A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1100 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.75
31

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA3N110 IXTA3N120  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V 1200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V 4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BUZ76
BUZ76
Harris Corporation
N-CHANNEL POWER MOSFET
SIHP30N60AEL-GE3
SIHP30N60AEL-GE3
Vishay Siliconix
MOSFET N-CH 600V 28A TO220AB
NTMFS5H610NLT1G
NTMFS5H610NLT1G
onsemi
MOSFET N-CH 60V 12A 44A 5DFN
IMZ120R045M1XKSA1
IMZ120R045M1XKSA1
Infineon Technologies
SICFET N-CH 1200V 52A TO247-4
SIHG24N65E-GE3
SIHG24N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 24A TO247AC
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
IRFR6215TR
IRFR6215TR
Infineon Technologies
MOSFET P-CH 150V 13A DPAK
IRFR3707
IRFR3707
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
SI4621DY-T1-E3
SI4621DY-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 6.2A 8SO
IXFK30N110P
IXFK30N110P
IXYS
MOSFET N-CH 1100V 30A TO264AA
SI4487DY-T1-GE3
SI4487DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 11.6A 8SO
SI4451DY-T1-GE3
SI4451DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 10A 8SO

Related Product By Brand

MEO500-06DA
MEO500-06DA
IXYS
DIODE GEN PURP 600V 514A Y4-M6
IXFP5N100P
IXFP5N100P
IXYS
MOSFET N-CH 1000V 5A TO220AB
IXFH18N60X
IXFH18N60X
IXYS
MOSFET N-CH 600V 18A TO247
IXTT69N30P
IXTT69N30P
IXYS
MOSFET N-CH 300V 69A TO268
IXTA110N055P
IXTA110N055P
IXYS
MOSFET N-CH 55V 110A TO263
IXTQ44N30T
IXTQ44N30T
IXYS
MOSFET N-CH 300V 44A TO3P
VMO1600-02P
VMO1600-02P
IXYS
MOSFET N-CH 200V 1900A Y3-LI
IXDN55N120D1
IXDN55N120D1
IXYS
IGBT MOD 1200V 100A 450W SOT227B
IXYX25N250CV1HV
IXYX25N250CV1HV
IXYS
IGBT 2500V 235A PLUS247
IXYT55N120A4HV
IXYT55N120A4HV
IXYS
IGBT GENX4 1200V 55A TO268HV
IXDH30N120D1
IXDH30N120D1
IXYS
IGBT 1200V 60A 300W TO247AD
IXS839S1
IXS839S1
IXYS
IC GATE DRVR HALF-BRIDGE 8SOIC