IXTA3N100D2
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IXYS IXTA3N100D2

Manufacturer No:
IXTA3N100D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N100D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 3A TO263
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IXTA3N100D2 IXTA6N100D2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V 95 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V 2650 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 125W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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