IXTA3N100D2
  • Share:

IXYS IXTA3N100D2

Manufacturer No:
IXTA3N100D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA3N100D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 3A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$5.79
43

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA3N100D2 IXTA6N100D2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V 95 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V 2650 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 125W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

MTA15N06
MTA15N06
onsemi
N-CHANNEL POWER MOSFET
IRFP054NPBF
IRFP054NPBF
Infineon Technologies
MOSFET N-CH 55V 81A TO247AC
FQP16N25
FQP16N25
onsemi
MOSFET N-CH 250V 16A TO220-3
IPN70R450P7SATMA1
IPN70R450P7SATMA1
Infineon Technologies
MOSFET N-CH 700V 10A SOT223
SQA700CEJW-T1_GE3
SQA700CEJW-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 100 V (D-S)
IXFA4N100P
IXFA4N100P
IXYS
MOSFET N-CH 1000V 4A TO263
SIUD402ED-T1-GE3
SIUD402ED-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 1A PPAK 0806
AUIRFR3710ZTRL
AUIRFR3710ZTRL
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
IRF7834
IRF7834
Infineon Technologies
MOSFET N-CH 30V 19A 8SO
ZVN4306GVTC
ZVN4306GVTC
Diodes Incorporated
MOSFET N-CH 60V 2.1A SOT223
FQB3N25TM
FQB3N25TM
onsemi
MOSFET N-CH 250V 2.8A D2PAK
TPC8026(TE12L,Q,M)
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 13A 8SOP

Related Product By Brand

VUO190-16NO7
VUO190-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 248A PWS-E1
MDMA65P1600TG
MDMA65P1600TG
IXYS
DIODE MODULE 1.6KV 65A TO240AA
MDNA50P2200TG
MDNA50P2200TG
IXYS
BIPOLAR MODULE - DIODE TO-240AA
DGSK32-018CS
DGSK32-018CS
IXYS
DIODE ARRAY SCHOTTKY 180V TO263
DHG50X600NA
DHG50X600NA
IXYS
DIODE MODULE 600V 50A SOT227B
DSA300I45NA
DSA300I45NA
IXYS
DIODE SCHOTTKY 45V 300A SOT227B
DSS25-0025B
DSS25-0025B
IXYS
DIODE SCHOTTKY 25V 25A TO220AC
IXFB90N85X
IXFB90N85X
IXYS
MOSFET N-CH 850V 90A PLUS264
IXKC20N60C
IXKC20N60C
IXYS
MOSFET N-CH 600V 15A ISOPLUS220
IXFN32N80P
IXFN32N80P
IXYS
MOSFET N-CH 800V 29A SOT-227B
IXTC160N10T
IXTC160N10T
IXYS
MOSFET N-CH 100V 83A ISOPLUS220
IXDF404SI
IXDF404SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC