IXTA36N20T
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IXYS IXTA36N20T

Manufacturer No:
IXTA36N20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA36N20T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 36A TO263
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IXTA36N20T IXTA86N20T   IXTA36N30T   IXTA32N20T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 86A (Tc) 36A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V - 10V
Rds On (Max) @ Id, Vgs - 29mOhm @ 500mA, 10V 110mOhm @ 500mA, 10V 72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id - 5V @ 1mA - 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 90 nC @ 10 V 70 nC @ 10 V 38 nC @ 10 V
Vgs (Max) - ±30V - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 4500 pF @ 25 V 2250 pF @ 25 V 1760 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 480W (Tc) - 200W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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