IXTA32P20T
  • Share:

IXYS IXTA32P20T

Manufacturer No:
IXTA32P20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA32P20T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 32A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:14500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$8.86
38

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA32P20T IXTA32N20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V 72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V 1760 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AA TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQD7N10LTM
FQD7N10LTM
onsemi
MOSFET N-CH 100V 5.8A DPAK
HUF75639S3S
HUF75639S3S
Fairchild Semiconductor
MOSFET N-CH 100V 56A D2PAK
IXFP7N80P
IXFP7N80P
IXYS
MOSFET N-CH 800V 7A TO220AB
PMPB33XN,115
PMPB33XN,115
NXP USA Inc.
MOSFET N-CH 30V 4.3A DFN2020MD-6
FQI15P12TU
FQI15P12TU
Fairchild Semiconductor
MOSFET P-CH 120V 15A I2PAK
TK560P60Y,RQ
TK560P60Y,RQ
Toshiba Semiconductor and Storage
MOSFET N-CHANNEL 600V 7A DPAK
STD9N80K5
STD9N80K5
STMicroelectronics
MOSFET N-CHANNEL 800V 7A DPAK
IRF9530NSTRR
IRF9530NSTRR
Infineon Technologies
MOSFET P-CH 100V 14A D2PAK
IRF9610STRR
IRF9610STRR
Vishay Siliconix
MOSFET P-CH 200V 1.8A D2PAK
IRF7484Q
IRF7484Q
Infineon Technologies
MOSFET N-CH 40V 14A 8SO
NTD5865NT4G
NTD5865NT4G
onsemi
MOSFET N-CH 60V 43A DPAK
BUK9213-30A,118
BUK9213-30A,118
NXP USA Inc.
MOSFET N-CH 30V 55A DPAK

Related Product By Brand

DSS10-01AS-TUB
DSS10-01AS-TUB
IXYS
DIODE SCHOTTKY 100V 10A TO263AB
IXTH11P50
IXTH11P50
IXYS
MOSFET P-CH 500V 11A TO247
IXTA6N100D2
IXTA6N100D2
IXYS
MOSFET N-CH 1000V 6A TO263
IXTT440N055T2
IXTT440N055T2
IXYS
MOSFET N-CH 55V 440A TO268
IXFE180N10
IXFE180N10
IXYS
MOSFET N-CH 100V 176A SOT227B
IXTH6N90
IXTH6N90
IXYS
MOSFET N-CH 900V 6A TO247
IXFA14N60P3
IXFA14N60P3
IXYS
MOSFET N-CH 600V 14A TO263
IXGT72N60A3
IXGT72N60A3
IXYS
IGBT 600V 75A 540W TO268
IXSQ20N60B2D1
IXSQ20N60B2D1
IXYS
IGBT 600V 35A 190W TO3P
IXGT24N170A
IXGT24N170A
IXYS
IGBT 1700V 24A 250W TO268
IXGA12N60BD1
IXGA12N60BD1
IXYS
IGBT 600V 24A 100W TO263AA
IXDN502SIA
IXDN502SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC