IXYS-IXTA1R6N100D2HV - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1000 V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id:	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	27 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	645 pF @ 10 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	100W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263HV
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXYS IXTA1R6N100D2HV