IXTA1R4N120P-TRL
  • Share:

IXYS IXTA1R4N120P-TRL

Manufacturer No:
IXTA1R4N120P-TRL
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
IXTA1R4N120P-TRL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 1.4A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D2Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.59
255

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA1R4N120P-TRL IXTA2R4N120P-TRL  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 700mA, 10V 7.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V 1207 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 86W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 (D2Pak) TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQU1N50TU
FQU1N50TU
Fairchild Semiconductor
MOSFET N-CH 500V 1.1A IPAK
IXTF1N450
IXTF1N450
IXYS
MOSFET N-CH 4500V 900MA I4PAC
TK22E10N1,S1X
TK22E10N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 100V 52A TO220
SPP08P06PXK
SPP08P06PXK
Infineon Technologies
P-CHANNEL POWER MOSFET
FQPF13N50T
FQPF13N50T
Fairchild Semiconductor
MOSFET N-CH 500V 12.5A TO220F
LND150N3-G-P002
LND150N3-G-P002
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
IXTA80N10T-TRL
IXTA80N10T-TRL
IXYS
MOSFET N-CH 100V 80A TO263
IPBH6N03LA
IPBH6N03LA
Infineon Technologies
MOSFET N-CH 25V 50A TO263-3
AON6408L
AON6408L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 14.5A/25A 8DFN
STB15N65M5
STB15N65M5
STMicroelectronics
MOSFET N-CH 650V 11A D2PAK
2N7635-GA
2N7635-GA
GeneSiC Semiconductor
TRANS SJT 650V 4A TO257
APT12057JLL
APT12057JLL
Microsemi Corporation
MOSFET N-CH 1200V 19A SOT227

Related Product By Brand

MDD95-14N1B
MDD95-14N1B
IXYS
DIODE MODULE 1.4KV 120A TO240AA
DSSK70-003B
DSSK70-003B
IXYS
DIODE ARRAY SCHOTTKY 30V TO247AD
DHG60I1200HA
DHG60I1200HA
IXYS
DIODE GEN PURP 1.2KV 60A TO247AD
IXTK180N15P
IXTK180N15P
IXYS
MOSFET N-CH 150V 180A TO264
IXFN64N50P
IXFN64N50P
IXYS
MOSFET N-CH 500V 61A SOT227B
IXTP01N100D
IXTP01N100D
IXYS
MOSFET N-CH 1000V 100MA TO220AB
IXTA54N30T
IXTA54N30T
IXYS
MOSFET N-CH 300V 54A TO263
IXTT30N50L
IXTT30N50L
IXYS
MOSFET N-CH 500V 30A TO268
IXEN60N120D1
IXEN60N120D1
IXYS
IGBT MOD 1200V 100A 445W SOT227B
IXBH16N170A
IXBH16N170A
IXYS
IGBT 1700V 16A 150W TO247AD
IXYH85N120A4
IXYH85N120A4
IXYS
IGBT GENX4 1200V 85A TO247
IXGX120N60B3
IXGX120N60B3
IXYS
IGBT 600V 280A 780W PLUS247