IXTA160N10T7
  • Share:

IXYS IXTA160N10T7

Manufacturer No:
IXTA160N10T7
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTA160N10T7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 160A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:132 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7 (IXTA)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$4.80
112

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTA160N10T7 IXTA180N10T7   IXTA130N10T7   IXTA160N10T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 180A (Tc) 130A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 6.4mOhm @ 25A, 10V 9.1mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 151 nC @ 10 V 104 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 6900 pF @ 25 V 5080 pF @ 25 V 6600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 430W (Tc) 480W (Tc) 360W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263-7 (IXTA) TO-263-7 (IXTA) TO-263-7 (IXTA) TO-263AA
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IXFA10N80P
IXFA10N80P
IXYS
MOSFET N-CH 800V 10A TO263
BS270-D74Z
BS270-D74Z
onsemi
MOSFET N-CH 60V 400MA TO92-3
BUK6Y19-30PX
BUK6Y19-30PX
Nexperia USA Inc.
MOSFET P-CH 30V 45A LFPAK56
IPB180N04S400ATMA1
IPB180N04S400ATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
UF3C065040T3S
UF3C065040T3S
UnitedSiC
MOSFET N-CH 650V 54A TO220-3
AOB1100L
AOB1100L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 8A/130A TO263
IRF7822TRPBF
IRF7822TRPBF
Infineon Technologies
MOSFET N-CH 30V 18A 8SO
ZVP0545GTC
ZVP0545GTC
Diodes Incorporated
MOSFET P-CH 450V 75MA SOT223
NTMFS4839NHT3G
NTMFS4839NHT3G
onsemi
MOSFET N-CH 30V 9.5A/64A 5DFN
SPI11N60CFDHKSA1
SPI11N60CFDHKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO262-3
AUIRF7738L2TR
AUIRF7738L2TR
Infineon Technologies
MOSFET N-CH 40V 35A DIRECTFET
MCH6336-S-TL-E
MCH6336-S-TL-E
onsemi
MOSFET P-CH 12V 5A MCPH6

Related Product By Brand

DSEP2X25-12C
DSEP2X25-12C
IXYS
DIODE MODULE 1.2KV 25A SOT227B
DSA9-16F
DSA9-16F
IXYS
DIODE AVALANCHE 1.6KV 11A DO203
MCO75-16IO1
MCO75-16IO1
IXYS
MOD THYRISTOR SGL 1600V SOT-227B
IXTH10N100D2
IXTH10N100D2
IXYS
MOSFET N-CH 1000V 10A TO247
IXTH1N200P3HV
IXTH1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO247HV
IXFH150N25X3
IXFH150N25X3
IXYS
MOSFET N-CH 250V 150A TO247
IXTH64N65X
IXTH64N65X
IXYS
MOSFET N-CH 650V 64A TO247
IXTP1R4N60P
IXTP1R4N60P
IXYS
MOSFET N-CH 600V 1.4A TO220AB
IXFT26N50
IXFT26N50
IXYS
MOSFET N-CH 500V 26A TO268
IXTQ54N30T
IXTQ54N30T
IXYS
MOSFET N-CH 300V 54A TO3P
IXGH32N170
IXGH32N170
IXYS
IGBT 1700V 75A 350W TO247AD
IXXH40N65B4
IXXH40N65B4
IXYS
IGBT 650V 120A 455W TO247AD